Integrated half-bridge power converter

ABSTRACT

An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

CROSS-REFERENCES TO OTHER APPLICATIONS

This application claims priority to U.S. provisional patent applicationSer. No. 63/077,526, for “THERMALLY ENHANCED ELECTRONIC PACKAGES FOR GANPOWER INTEGRATED CIRCUITS”, filed on Sep. 11, 2020, which is herebyincorporated by reference in entirety for all purposes.

This application is related to the following concurrently filed andcommonly assigned U.S. nonprovisional patent application Ser. No.17/169,304, for “THERMALLY ENHANCED ELECTRONIC PACKAGES FOR GAN POWERINTEGRATED CIRCUITS”, filed on Feb. 5, 2021, which is herebyincorporated by reference in its entirety for all purposes.

FIELD

The present invention relates generally to electronic packages forsemiconductor devices and in particular to electronic packages for oneor more gallium nitride (GAN)-based semiconductor devices.

BACKGROUND

Electronic devices such as computers, servers and televisions, amongothers, typically employ one or more power conversion circuits thatconvert one form of electrical energy to another. In some applicationsthe power semiconductor devices utilized in the power conversioncircuits may require specialized electronic packages to accommodatetheir unique physical configurations and performance requirements. Forexample, some power semiconductor devices are now capable of operatingin the tens and hundreds of Megahertz which creates a need for lowinductance electronic packages with low thermal resistance for the highpower density of these devices. Thus, new electronic packages that aresuited for use with high frequency and high power density powersemiconductor devices are needed.

SUMMARY

To better understand the nature and advantages of the presentdisclosure, reference should be made to the following description andthe accompanying figures. It is to be understood, however, that each ofthe figures is provided for the purpose of illustration only and is notintended as a definition of the limits of the scope of the presentdisclosure. Also, as a general rule, and unless it is evident to thecontrary from the description, where elements in different figures useidentical reference numbers, the elements are generally either identicalor at least similar in function or purpose.

In some embodiments an electronic device comprises a leadframe includinga die-attach pad, a drain terminal, a source terminal and at least oneI/O terminal. The die-attach pad, the drain terminal, the sourceterminal and the at least one I/O terminal are electrically isolatedfrom each other. A gallium nitride (GaN) based device attached to thedie-attach pad and includes a drain coupled to the drain terminal, asource coupled to the source terminal and an I/O coupled to the at leastone I/O terminal.

In some embodiments an electronic power conversion component comprisesan electrically conductive package base comprising a source terminal, adrain terminal, at least one I/O terminal and a die-attach pad. Thesource terminal is electrically isolated from the die attach pad. AGaN-based semiconductor die is secured to the die attach pad andincludes a power transistor having a source and a drain, wherein thesource is electrically coupled to the source terminal and the drain iselectrically coupled to the drain terminal. One or more first wirebondselectrically couple the source to the source terminal and one or moresecond wirebonds electrically couple the drain to the drain terminal. Anencapsulant is formed over the GaN-based semiconductor die and at leasta top surface of the package base.

In some embodiments an electronic device comprises an electricallyconductive package base including a high side die attach pad, a low sidedie attach pad and a plurality of I/O terminals. A low side galliumnitride (GaN) based die is attached to the low side die attach pad, thelow side GaN-based die including a low side gate, a low side drain, alow side source and a level shifter circuit. A silicon-based dieincludes an input for receiving a control signal and an output fortransmitting a gate control signal. a high side GaN-based die isattached to the high side die attach pad, the high side GaN-based dieincluding a high side source coupled to the low side drain, a high sidegate coupled to the level shifter circuit, and a high side drain coupledto one or more of the plurality of I/O terminals. An encapsulant atleast partially encapsulates the package base, the low side GaN-baseddie, the silicon-based die, and the high side GaN-based die.

In some embodiments an electronic power conversion component comprisesan electrically conductive package base comprising a power inputterminal, a ground terminal, a switch node terminal and at least one I/Oterminal. A first GaN-based semiconductor device is attached to theground terminal and includes a first power transistor having a firstsource contact, a first drain contact, a first gate contact and a levelshift output contact. A silicon-based semiconductor device includes aninput for receiving a control signal and an output for transmitting agate control signal. A second GaN-based semiconductor device is attachedto the switch node terminal and includes a second power transistorhaving a second source contact, a second drain contact and a second gatecoupled to the level shift output contact, wherein the second sourcecontact is electrically coupled to the first drain contact, the seconddrain contact is electrically coupled to the power input terminal andthe first source contact is electrically coupled to the ground terminal.An encapsulant is formed over at least a portion of the electricallyconductive package base, the first GaN-based semiconductor device, thesilicon-based semiconductor device and the second GaN-basedsemiconductor device.

To better understand the nature and advantages of the presentdisclosure, reference should be made to the following description andthe accompanying figures. It is to be understood, however, that each ofthe figures is provided for the purpose of illustration only and is notintended as a definition of the limits of the scope of the presentdisclosure. Also, as a general rule, and unless it is evident to thecontrary from the description, where elements in different figures useidentical reference numbers, the elements are generally either identicalor at least similar in function or purpose.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a simplified schematic of a half bridge power conversioncircuit according to an embodiment of the invention;

FIG. 2A is a plan view of the inside of a single switch electronicpackage with the encapsulant removed according to an embodiment of theinvention;

FIG. 2B is an isometric bottom view of the electronic packageillustrated in FIG. 2A;

FIG. 3 is an isometric partial cross-sectional view of the electronicpackage illustrated in FIGS. 1-2B attached to a circuit board withaccompanying external current sense resistors;

FIG. 4 is an isometric partial cross-sectional view of an electronicdevice;

FIG. 5 is an isometric partial cross-sectional view of the electronicpackage illustrated in FIGS. 1-3 attached to a circuit board;

FIG. 6A illustrates a simplified schematic of a current sensing circuitaccording to an embodiment of the invention;

FIG. 6B illustrates a simplified schematic of a high-voltage startupcircuit, according to embodiments of the disclosure;

FIG. 6C illustrates a simplified schematic of a desaturation detectioncircuit, according to embodiments of the disclosure;

FIG. 7A is a transparent plan view of an electronic package with theencapsulant removed, the package including a co-packaged silicon andGaN-based single switch, according to an embodiment of the invention;

FIG. 7B is a transparent plan view of an electronic package with theencapsulant removed, the package including an integrated controller withseparate high voltage device for startup, according to an embodiment ofthe invention;

FIG. 7C is a transparent plan view of an electronic package with theencapsulant removed, the package including an integrated controller witha GaN-based high voltage startup circuit, according to an embodiment ofthe invention;

FIG. 7D is a transparent plan view of an electronic package with theencapsulant removed, the package including an integrated controller witha silicon-based high voltage startup circuit, according to an embodimentof the invention;

FIG. 7E is a transparent plan view of an electronic package with theencapsulant removed, the package including a GaN-based power device anda silicon-based controller that includes some or all of thefunctionality of a GaN-based driver/control device, according to anembodiment of the invention;

FIG. 7F is a transparent plan view of an electronic package with theencapsulant removed, the package including a GaN-based power device witha current sense circuit and a silicon-based controller that includessome or all of the functionality of a GaN-based driver/control deviceaccording to an embodiment of the invention;

FIG. 8 is a transparent plan view of an electronic package with theencapsulant removed, according to a stacked die single switch embodimentof the invention;

FIG. 9 is a transparent plan view of an electronic package with theencapsulant removed, according to a single switch with an internal Zenerreference embodiment of the invention;

FIG. 10A is a transparent plan view of an electronic package with theencapsulant removed, according to a half bridge embodiment of theinvention;

FIG. 10B illustrates a simplified functional block diagram of theelectronic package illustrated in FIG. 10A; and

FIG. 11 is method of manufacturing an electronic package according to anembodiment of the invention.

DETAILED DESCRIPTION

Several illustrative embodiments will now be described with respect tothe accompanying drawings, which form a part hereof. The ensuingdescription provides embodiment(s) only and is not intended to limit thescope, applicability, or configuration of the disclosure. Rather, theensuing description of the embodiment(s) will provide those skilled inthe art with an enabling description for implementing one or moreembodiments. It is understood that various changes may be made in thefunction and arrangement of elements without departing from the spiritand scope of this disclosure. In the following description, for thepurposes of explanation, specific details are set forth in order toprovide a thorough understanding of certain inventive embodiments.However, it will be apparent that various embodiments may be practicedwithout these specific details. The figures and description are notintended to be restrictive. The word “example” or “exemplary” is usedherein to mean “serving as an example, instance, or illustration.” Anyembodiment or design described herein as “exemplary” or “example” is notnecessarily to be construed as preferred or advantageous over otherembodiments or designs.

Certain embodiments of the present invention relate to electronicpackages for semiconductor devices. While the present invention can beuseful for a wide variety of electronic packages, some embodiments ofthe invention are particularly useful for electronic packages thatenable a low thermal resistance and low inductance coupling to a circuitboard to which the package is attached, as described in more detailbelow.

For example, in some embodiments a GaN-based semiconductor device can bedisposed within an electronic package having a metallic package basethat is at least partially covered with a dielectric encapsulant. TheGaN-based semiconductor device can be attached to a die attach pad andcan include a source coupled to source terminals of the package, a draincoupled to drain terminals of the package and a gate coupled to an I/Oterminal of the package. The die attach pad can be electrically isolatedfrom source terminals enabling the die attach pad to be directly coupledto a bottom layer (e.g., ground plane) of a circuit board to which theelectronic package is attached. The direct coupling to the bottom layercan enable a low thermal resistance between the GaN-based semiconductordevice and the ground plane of the circuit board.

In another example an electronic package includes an internal currentsensing circuit such that the source terminals of the electronic packagecan be electrically coupled to the die attach pad via the circuit board.The die attach pad can be directly coupled to a bottom layer (e.g.,ground plane) of a circuit board to which the electronic package isattached. The direct coupling to the bottom layer enables a low thermalresistance between the GaN-based semiconductor device and the circuitboard. The internal current sensing circuit replaces an external senseresistor that consumes power and heats the board. It eliminates thenoise caused by that external circuit, and allows the source and groundpins to share a common ground plane for improved heat spreading andthermal management.

In order to better appreciate the features and aspects of electronicpackages for GaN-based devices according to the present invention,further context for the invention is provided in the following sectionby discussing one particular implementation of electronic packaging forGaN-based semiconductor devices according to embodiments of the presentinvention. These embodiments are for example only and other embodimentsmay be employed for other devices such as multiple GaN-based devices ina single electronic package, a combination of GaN and silicon devices ina single electronic package or electronic packages that include one ormore other types of semiconductor devices such as, but not limited toindium phosphide, gallium arsenide or silicon carbide.

Now referring to FIG. 1 , an example half-bridge power conversioncircuit 100 that may employ one or more packaged GaN-based semiconductordevices according to embodiments of the disclosure is illustrated.Half-bridge circuit 100 may also be known as a synchronous Buckconverter. Circuit 100 is for example only and the electronic packagesdescribed herein can be used in other circuits including, but notlimited to flyback converters, quasi-resonant flyback converters, activeclamp flyback converters, boost converters, LLC converters, buck-boostconverters, SEPIC converters, totem pole power factor correctionconverters, and the like without departing from this disclosure. In someembodiments circuit 100 can include low side and high side powertransistors, 110, 115, respectively, (also referred to herein asswitches) that are configured to regulate power delivered to a load 120,as discussed in more detail below.

More specifically, half bridge power conversion circuit 100 illustratedin FIG. 1 includes a low side GaN transistor 110 and a high side GaNtransistor 115 coupled to load 120. A voltage source 125 (also known asa rail voltage) can be connected to a drain 130 of high side transistor115, and the high side transistor can be used to control power inputinto power conversion circuit 100. High side transistor 115 may furtherhave a source 135 that is coupled to a drain 140 of low side transistor110, forming a switch node (Vsw) 145. The operation of high sidetransistor 115 can be controlled by a high side control gate 165 coupledto a high side transistor driver 170. High side transistor driver 170can be controlled by controller 105.

Low side transistor 110 may have a source 150 connected to a ground 180.Low side transistor 110 may have a low side control gate 155 that isoperated by a low side transistor driver 160 coupled to controller 105and configured to be in a closed position during an off time of highside transistor 115. In some embodiments, one or more current senseresistors 195 can be coupled between source 150 and ground 180 and usedto monitor current flow through circuit 100.

In some embodiments low side and high side transistors 110, 115,respectively, are GaN-based transistors that include electrically biasedlow side and high side substrates 185, 190, respectively. In someembodiments an appropriate electrical bias applied to low side and highside substrates 185, 190, respectively can improve the operation andreliability of low side and high side transistors 110, 115,respectively. In this embodiment low side and high side substrates 185,190, respectively are biased to a similar voltage potential as theirrespective sources.

More specifically, in this embodiment, low side substrate 185 is coupledto a similar voltage potential as low side source 150, which in thisembodiment is close to ground 180. Thus, low side transistor 110includes two connections to ground 180. One connection is from sourceterminal 150 through one or more current sense resistors 195 and theother connection is from substrate 185 to ground 180. High sidesubstrate 190 is coupled to switch node 145 potential so the high sidesubstrate is at a similar potential as high side source 135. Circuit 100can operate similar to other synchronous buck converters to regulatepower delivered to load 120, as understood by one of skill in the arthaving the benefit of this disclosure.

FIG. 2A illustrates a plan view of an electronic package 200 (with thepackage encapsulant removed for clarity) that includes low sidetransistor 110 of circuit 100 illustrated in FIG. 1 . As shown in FIG.2A, electronic package 200 can be fabricated using a quad-flat no lead(QFN) manufacturing process where low side transistor 110 is attached toa package base 205 formed from a metal leadframe that defines aplurality of terminals, as described in more detail below. In thisembodiment, source 150 of low side transistor 110 is coupled to sourceterminals 210 a-210 g of package 200, drain 140 is attached to drainterminals 215 a-215 i and I/O 220 are attached to I/O terminals 225a-225 n using one or more wire bonds 230. In some embodiments one ormore I/O 220 can be a gate for low side transistor 110, a current senseoutput or any other suitable signal. In further embodiments, one or moreI/O terminals 225 a-225 n can be electrically coupled to die attach pad235, such as for example 225 f, 225 g, 225 m and 225 n. In furtherembodiments low side transistor 110 can include an optional zener diodestructure 227 that is coupled to one or more I/O terminals 225 a-225 n.

Low side transistor 110 is attached to die attach pad 235 with anelectrically conductive material, thus the die attach pad iselectrically and thermally coupled to substrate 185 (see FIG. 1 ) of thelow side transistor. In this particular embodiment, source terminals 210a-210 g are electrically isolated from die attach pad 235 (and fromsubstrate 185) which enables electronic package 200 to have a lowthermal resistance coupling to a circuit board to which it is attached,as described in more detail below.

FIG. 2B illustrates a simplified isometric bottom view of package 200shown in FIG. 2A. As shown in FIG. 2B, package 200 includes sourceterminals 210 a-210 g, die attach pad 235, drain terminals 215 a-215 iand I/O terminals 225 a-225 n, that are all electrically isolated fromone another. Encapsulant 250 is formed over low side transistor 110 (seeFIG. 2A), wirebonds 230 and portions of base 205. In some embodiments acreepage spacing 255 between die attach pad 235 and drain terminals 215a-215 i is between 0.5 and 3.0 millimeters for creepage and clearancerequirements of certain high voltage applications. To assemble package200 to a circuit board, source terminals 210 a-210 g, die attach pad235, drain terminals 215 a-215 i and I/O terminals 225 a-225 n can besoldered or otherwise coupled to corresponding metal pads on a top layerof a circuit board (not shown in FIG. 2B). In some embodiments theelectrical isolation of source terminals 210 a-210 g from die attach pad235 can result in the ability to efficiently couple heat from low sidetransistor 110, through die attach pad 235 and into the large groundplane of the circuit board to which package 200 is attached, asexplained in greater detail below.

FIG. 3 illustrates a simplified partial cross-sectional view of package200 attached to a circuit board 305. As shown in FIG. 3 , encapsulant250 of package 200 is shown as a transparent material so die attach pad235, source terminals 210 a-210 g, drain terminals 215 a-215 i and I/Oterminals 225 a-225 n can be shown in greater detail. In thisembodiment, package 200 is attached to a top layer 310 of circuit board305. Circuit board 305 also includes a bottom layer 315 that may be whatis commonly called a ground plane, however in other embodiments thecircuit board can have more than two layers, many of which can be usedas ground planes. In this embodiment top layer 310 is electricallyinsulated from bottom layer 315 by one or more electrically insulativelayers 320. Electrically insulative layers 320 can be composed of anorganic laminate commonly referred to as FR4, FR5, BT or any othersuitable structure.

As appreciated by one of skill in the art the one or more ground planesof a circuit board (e.g. bottom layer 315) can be used as an efficientheat sink that receives thermal energy from package 200 and efficientlydissipates the thermal energy within the circuit board. Ground planestypically have a high percentage of metal, often including copper, thatcan efficiently reduce thermal energy density, as compared to signallayers that typically have a low percentage of metal. Conversely, theone or more electrically insulative layers 320 can be made from organicor other insulative materials and can have a thermal conductivity thatis, for example, one to three orders of magnitude less than copper whichcan be used to top and bottom layers 310, 315, respectively. In someembodiments package 200 can be arranged to efficiently transfer thermalenergy from low side transistor 110 to bottom layer 315 (e.g., a groundplane) by using thermal vias that are copper filled or copper plated toprovide a low thermal impedance between low side transistor 110 and thebottom layer, as described in greater detail below.

In the embodiment shown in FIG. 3 , low side transistor 110 iselectrically and thermally coupled to die attach pad 235 using solder,conductive epoxy or other die attach material having a relatively lowthermal impedance. Thus, not only is die attach pad 235 the electricalconnection to substrate 185 (see FIG. 1 ) of low side transistor 110, itis also an efficient thermal path to conduct heat out of the low sidetransistor. In this embodiment, die attach pad 235 is electricallyisolated from source terminals 210 a-210 g such that the die attach padcan be directly coupled to bottom layer 315 (e.g., a ground plane) ofcircuit board 305 enabling a low thermal resistance between low sidetransistor 110 and circuit board 305. More specifically, in one exampleembodiment, die attach pad 235 can be soldered to a die attach padportion 325 of top layer 310 which can be thermally and electricallycoupled to bottom layer 315 by a plurality of vias 330. Each via 330 caninclude a metal barrel 390 that provides an efficient thermal conduitbetween top layer 310 and bottom layer 315, providing package 200 with alow thermal resistance between low side transistor 110 and bottom layer315. In further embodiments one or more ground planes can be on the toplayer, the bottom layer and on one or more intermediate layers.

In this embodiment, source terminals 210 a-210 g are coupled to bottomlayer 315 (e.g., a ground plane) through a separate electrical path thatforces all source current through current sense resistors 335. Byelectrically isolating source terminals 210 a-210 g from die attach pad235 (even though both are ultimately coupled to ground 180) currentsensing can be performed by current sense resistors 335 and the dieattach pad can be directly coupled to bottom layer 315 (e.g. groundplane) enabling package 200 to have a low thermal impedance from lowside transistor 110 to circuit board 305.

In this particular embodiment, die attach pad portion 325 of top layer310 extends beyond two lengthwise edges of package 200 with extensions340 to increase thermal spreading in the top layer and to provideadditional area to increase the number of vias 330 connecting the toplayer (and die attach pad 235) to bottom layer 315. Source terminals 210a-210 g are attached to a source terminal portion 375 of top layer 310that is coupled to current sense resistors 335. Current sense resistorsare then coupled to current sense pad 345 that is coupled to bottomlayer 315 (e.g., ground plane) through one or more ground vias 380.

In some embodiments, due to the relatively high transient current andvoltage signals at source 150, source terminal portion 375 and currentsense resistors, these regions can be electrically noisy (e.g., sourcesof electromagnetic interference (EMI)) which can interfere with otheradjacent circuits. Because die attach pad 235 and die attach pad portion325 of top layer 310 are directly coupled to bottom layer 315 (e.g.,ground plane) these features can be used as electromagnetic shields forlow side transistor 110 and other circuitry within package 200. Morespecifically, as shown in FIG. 3 there are two different colors ofshaded regions to illustrate the separation of the relatively noisysource terminal portion 375 and current sense resistors 335 (shown in adarker shade) from the relatively stable (e.g., less noisy) regions thatcan be used as EMI shielding such as bottom layer 315, die attach padportion 325 and die attach pad 235 (shown in a lighter shade).

Thus, in some embodiments the electrical isolation between die attachpad 235 and source terminals 210 a-210 g enables package 200 to have alow thermal impedance to bottom layer 315 of circuit board 305 as wellas providing EMI protection for circuits within the package. In otherembodiments that may not use current sense resistors 335, electricalisolation between die attach pad 235 and source terminals 210 a-210 genables the source terminals and die attach pad 235 of package 200 to beelectrically coupled together on top layer 310 of circuit board 305,such that die attach pad portion 325 of top layer 310 can be increasedin size permitting thermal energy to be dissipated on three sides ofpackage 200, as shown and described later in FIG. 5 .

As further illustrated in FIG. 3 , in some embodiments one or more I/Oterminals 225 a-225 n can be electrically and/or thermally coupled todie attach pad 235 to increase the effective area of the die attach padto further reduce thermal impedance to bottom layer 315. In oneembodiment I/O terminals 225 a, 225 b, 225 e-225 i and 225 l-n can beelectrically and thermally shorted to die attach pad 235 leaving I/Oterminals 225 c, 225 d, 225 j and 225 k as individual signal pins (e.g.,gate drive signal, control signal, etc.) coupled to one or moresemiconductor devices within electronic package 200.

Although the terms low side transistor and high side transistor are usedherein, it is understood that in any embodiments described within thisdisclosure that the low side transistor and the high side transistor mayinclude other circuitry such as, but not limited to low and high sidedrivers, portions of drivers, current sense circuits and any otherancillary circuits. In one embodiment low side transistor and/or highside transistor can each include a power field-effect transistor (FET)and a pull-down transistor that is coupled to the power FET.

Although package 200 has been described herein as including low sidetransistor 110, one of skill in the art having the benefit of thisdisclosure will appreciate that a similar package could be used for highside transistor 115 (see FIG. 1 ), a combination of high side transistorand low side transistors 110, or any other combination of devices.Additional package configurations are described herein, however thisdisclosure is in no way limited to these configurations nor is itlimited to the use of such a package configuration in any specific typeof electrical circuit.

FIG. 4 illustrates a simplified partial cross-sectional view of anelectronic package device 400 attached to a circuit board 405. As shownin FIG. 4 , device 400 also employs a QFN structure, however device 400has a transistor 410 including a source 415 of that is electricallycoupled to die attach pad 420, instead of to electrically isolatedsource terminals 210 a-210 g as was the arrangement of package 200.Thus, die attach pad 420 of device 400 follows the voltage potential ofsource 415 and is isolated from a bottom layer 425 (e.g., ground plane)of circuit board 405 until “after” current sense resistors 430 atresistor pad 435. This isolation enables all current that flows throughsource 415 to flow through current sense resistors 430 providing anaccurate indication of current flowing to the load. After the currentflows through current sense resistors 430, the current is coupled toresistor pad 435 which is coupled to bottom layer 425 (e.g., groundplane) using one or more ground vias 455. The electrical isolation ofdie attach pad 420 from bottom layer 425 (e.g., ground plane) generallyresults in a higher thermal impedance between transistor 410 and bottomlayer 425 of circuit board 405 as compared to the embodiment shown in inFIG. 3 .

The higher thermal resistance is primarily due to the lack of vias 330(see FIG. 3 ) that thermally and electrically couple top layer 440 tobottom layer 425. More specifically, circuit board 405 does not havevias 330 (see FIG. 3 ) that couple die attach pad portion 445 of toplayer 440 to bottom layer 425 (e.g., ground plane). Thus, to dissipatethermal energy generated by low side transistor 410, device 400transfers thermal energy to top layer 440 which then couples thermalenergy to bottom layer 425 through electrically insulative layer 450 ofcircuit board 405. Electrically insulative layer 450 can be between oneto three orders of magnitude lower thermal conductivity than vias 330(see FIG. 3 ), resulting in an increase in thermal impedance as comparedto the architecture shown in FIG. 3 .

Further, because die attach pad 420 is directly coupled to source 415and to current sense resistors 430, the die attach pad and die attachpad portion 445 of top layer 440 are electrically “noisy” and may notfunction as EMI shields as they did in FIG. 3 . Rather, in theconfiguration shown in FIG. 4 , noise emanating from die attach padportion 445 of top layer 440 and die attach pad 420 can negativelyaffect transistor 410 and or other adjacent circuits that are proximateto or within device 400. More specifically, as shown in FIG. 4 there aretwo different colors of shaded regions to illustrate the separation ofthe relatively noisy die attach pad 420, die attach pad portion 445 andcurrent sense resistors 430 (shown in a darker shade) from therelatively stable (e.g., less noisy) regions that can be used as EMIshielding such as bottom layer 425 (shown in a lighter shade).

FIG. 5 illustrates a simplified partial cross-sectional view ofelectronic package 200 of FIG. 2 attached to a different circuit board505. As shown in FIG. 5 , in contrast with circuit board 305 of FIG. 3 ,circuit board 505 of FIG. 5 does not include current sense resistors 335because current sensing is performed within transistor 110 and/or withinelectronic package 200, as described in more detail below. Further, inthis embodiment a main pad portion 510 of top layer 515 electricallycouples die attach pad 235 to source terminals 210 a-210 g. This enablesmain pad portion 510 to extend into the area that was used by currentsense resistors 335 (see FIG. 3 ) such that thermal energy can bedistributed on three sides of package 200 as compared to on two sides ofpackage 200 as illustrated in FIG. 3 . This also enables a greaternumber of vias 520 that couple top layer 515 to bottom layer 525,reducing thermal impedance from the top layer to the bottom layer. Thus,as shown in FIGS. 3 and 5 one package 200 can be used with differentconfigurations of circuit boards 405, 505 and provide a low thermalimpedance coupling to bottom layer 525.

FIG. 6A illustrates a simplified electrical schematic of a currentsensing circuit 600, according to embodiments of the disclosure. Asshown in FIG. 6 , current sensing circuit 600 includes a main transistor605 coupled in parallel with a detection transistor 610 and a detectionresistor 615. More specifically gates, sources and drains of maintransistor 605 and detection transistor 610 are all coupled together,respectively, such that the main transistor and the detection transistorare coupled between the same circuit nodes and operate simultaneously.In some embodiments detection transistor 610 is formed in asubstantially identical way as main transistor 605, except the detectiontransistor has a fewer number of parallel transistor structures causingit to have a higher on-resistance than main transistor. Thus, when aparticular gate voltage is simultaneously applied to both maintransistor 605 and detection transistor 610, a proportionally reducedamount of current flows through the detection transistor. The amount ofcurrent flowing through detection transistor 610 can be determined bymeasuring the voltage potential across detection resistor 615.

Because there is a proportional amount of current flowing throughdetection transistor 610, a signal that is generated by the detectiontransistor and/or detection resistor 615 can be considered a ratioedoutput signal. More specifically the ratioed output signal represents aratio of the current flowing through detection transistor 610 ascompared to the current flowing through main transistor 605. In oneembodiment the ratioed output signal can be provided at an I/O terminalof an electronic package (e.g., electronic package 200 illustrated inFIGS. 2-3 and 4 ) and can supply a current that is a fixed ratio of acurrent flowing through main transistor 605. Because the current flowingthrough detection transistor 610 is proportionally less than the currentflowing through main transistor 605, the power dissipation of detectionresistor 615 may be proportionally smaller than a resistor that iscoupled in parallel with main transistor 605.

In some embodiments detection transistor 610 and main transistor 605 areformed monolithically on a unitary semiconductor device, while in otherembodiments they can be formed on different semiconductor devices. Invarious embodiments a co-packaged silicon-based device can detectcurrent flowing through main transistor 605 and generate an outputcurrent signal that is a ratioed output signal. In other embodimentsmain transistor 605 can be a GaN-based semiconductor device anddetection transistor 610 can be a silicon-based device that allowscurrent to flow in proportion to the main transistor. These and anyother types of integrated current sensing devices can be incorporatedwithin package 200 which can be used with circuit board 505 illustratedin FIG. 5 . The aforementioned current sensing circuits and other suchembodiments are disclosed in co-owned U.S. Pat. No. 10,666,147, which isincorporated by reference herein in its entirety for all purposes.

FIG. 6B illustrates a simplified schematic of a high-voltage startupcircuit 620, according to embodiments of the disclosure. As shown inFIG. 6B a high-voltage depletion mode GaN-based transistor 622 includesa drain 624 coupled to a high-voltage potential 626 such as ahigh-voltage rail. Source 628 is coupled to an output terminal 630 thatcan supply a startup voltage to a circuit, such as a half-bridgecircuit. To control a voltage at output terminal 630, a control circuit632 senses a voltage at output terminal 630 and controls a gate terminal634 of high voltage depletion mode GaN-based transistor 622. In someembodiments high-voltage depletion mode GaN-based transistor 622 is aseparate discrete device while in various embodiments it can beintegrally formed on a low-side GaN-based die such as low-side substrate185, illustrated in FIG. 1 .

FIG. 6C illustrates a simplified schematic of a desaturation detectioncircuit 640, according to embodiments of the disclosure. As shown inFIG. 6C desaturation detection circuit 640 can detect when a powertransistor 642 (e.g., high side transistor 115 (see FIG. 1 ) or low sidetransistor 110) goes into desaturation which can cause damage to thetransistor. In this particular embodiment power transistor 642 is a lowside transistor having a source coupled to ground and a drain coupled toa switch node 644. Gate is controlled by gate control logic circuit 646.When PWM node 648 is high, gate logic transmits a high gate signal togate of power transistor 642 turning it on such that detection node 650is relatively close to ground potential. Vcc 652 feeds current throughresistor 654, through diode 656, through power transistor 642 to ground.When power transistor 642 enters a desaturation mode a resistance of thepower transistor increases and a voltage at detection node 650 increasesproportionally.

As voltage at detection node 650 continues to increase, a voltage atdivider node 658 changes proportionally. A comparator 660 can beconfigured to detect when voltage at divider node 658 changes by apredetermined amount through appropriate control of voltage supplied ata Vref node 662 and selection of the values of resistors 654 and 664.After voltage at detection node 650 passes a predetermined thresholdvoltage, comparator 660 transmits a fault signal through output 668 togate control logic circuit 646. If gate control logic circuit 646determines that PWM node 648 is high and simultaneously receives a faultsignal from comparator 660, the gate control logic circuit transmits alow signal to gate to turn off power transistor 642. In some embodimentsdiode 656 is a GaN-based diode connected transistor (e.g., gate tied todrain) and is formed monolithically with power transistor 642. Asdescribed above, in some embodiments diode 642 can be formed on a highside GaN based device and electrically coupled to a source of a highside power transistor to protect high side power transistor fromdesaturation and/or a fault condition.

FIG. 7A illustrates a transparent plan view of an electronic package 700that may be similar to electronic package 200 illustrated in FIGS. 3 and5 . As shown in FIG. 7 , electronic package 700 can be fabricated usinga quad-flat no lead (QFN) manufacturing process where a GaN-based powertransistor 705 and a silicon-based driver/control device 710 areattached to a die attach pad 715. In this particular embodiment,GaN-based power transistor 705 can include any or all of a GaN-basedpower transistor, a current sense circuit and/or one or more portions ofa driver circuit for the power transistor.

In some embodiments, GaN-based power transistor 705 includes a source720 coupled to die attach pad 715, a drain 725 coupled to one or moredrain terminals 730 a-730 i and a gate 735 connected to silicon-baseddriver/control device 710 via wirebonds 740. In this embodiment, becausethere is an internal current sense circuit, source 720 of GaN-basedpower transistor 705 can be electrically coupled to die attach pad 715without negatively affecting a thermal resistance between package 700and a circuit board to which it is attached. Silicon-baseddriver/control device 710 can include one or more I/O connections 755 athat are coupled to I/O terminals 745 a-745 u formed via wirebonds 740.

In some embodiments one of the one or more I/O connections 755 is acurrent sense output that generates a ratioed current sense outputsignal that corresponds to a current flowing through GaN-based powertransistor 705. In some embodiments the current sense circuit can besimilar to current sense circuit 600 described in FIG. 6 , however inother embodiments a different type of current sense circuit can be used.In one embodiment at least a portion of the current sense circuit can beintegrated in silicon-based driver/control device 710 such that thesilicon-based device transmits a ratioed current sense signal at an I/Oterminal 745 a-745 u of package 700.

As described above with regard to FIG. 5 , electronic package 700includes an internal current sense feature so source 720 of GaN-basedpower transistor 705 can be electrically coupled to die attach pad 715and the die attach pad can be directly coupled to a ground plane of acorresponding circuit board to provide a low thermal impedance betweenGaN-based power transistor 705 and the circuit board.

In further embodiments GaN-based power transistor 705 includes a powertransistor device coupled to a pull-down device that are bothmonolithically formed on one die. In some embodiments driver/controldevice 710 includes a pull-down driver circuit that transmits a signalto the pull-down device to turn off the power transistor. In furtherembodiments, driver/control device 710 receives an indication of a drainvoltage of GaN-based power transistor 705, and uses that signal todetect if an overcurrent or short circuit condition occurs while thepower transistor in an on state. Driver/control device 710 can alsoinclude an enable function to keep GaN-based power transistor 705 in asleep mode, and in some embodiments also has an auto-enable function tocommand the driver/control device 710 to a standby state after apredetermined interval without receiving a PWM input signal, which canreduce current consumption. In yet further embodiments driver/controldevice 710 can include one or more power rail circuits that deliver apredetermined voltage and/or current to the digital isolator or anyother external circuitry.

FIG. 7B illustrates a transparent plan view of an electronic package 760that may be similar to electronic package 700 illustrated in FIG. 7A,however in this embodiment the electronic package also includes acontroller 765 and a startup transistor 770 attached to die attach pad715. In some embodiments controller 765 can be a silicon or GaN-baseddevice and in one embodiment can be a quasi-resonant flyback controllerthat delivers one or more PWM signals that control operation ofGaN-based power transistor 705. In further embodiments controller 765can also transmit one or more control signals (e.g., a high-side PWMdrive signal) that controls operation of a separate high-side powertransistor.

In some embodiments startup transistor 770 can be what is commonly knownas a JFET device that is coupled to a rectified high voltage AC line atI/O terminal 733 a. In some embodiments, to provide a voltagewithstanding distance, one or more of terminals 730 a-730 g can beremoved (e.g., FIG. 7B shows that drain terminals 730 b and 730 c havebeen removed). Startup transistor 770 can allow current from therectified high voltage AC line to power controller 765 during startupuntil power can be supplied to the controller from another source, suchas, for example, from an auxiliary winding of a transformer.Controller/driver 765 and GaN-based power transistor 705 can have any ofthe features described above.

FIG. 7C illustrates a transparent plan view of an electronic package 775that may be similar to electronic packages 700 and 750 illustrated inFIGS. 7A and 7B, respectively, however in this embodiment GaN-basedpower transistor 780 includes an integrated startup transistor thatperforms a similar function as startup transistor 770 illustrated inFIG. 7B. More specifically, in this embodiment GaN-based powertransistor 780 may include a power transistor device, a pull-down deviceand a startup transistor device monolithically integrated on a singledie. In some embodiments the startup transistor can be a depletion-modeGaN FET that can have a negative pinch-off voltage. In one embodimentthe pinch-off voltage can be between −10 to −25 volts.

During startup, the gate at ground can cause an appropriate voltage tobe delivered to controller 765 from the source. Once powered up to startcontroller 765, the depletion-mode transistor could be switched off witha switch coupled in series connection between VDD and a source contactof the depletion-mode transistor. In some embodiment the GaN-basedstartup transistor can enable the startup circuit to be as capable ofhandling voltage spikes as the power transistor, as compared to theembodiment illustrated in FIG. 7B that may limit the operation voltageto a lower voltage due to the lower maximum operating voltage of startuptransistor 770. In one embodiment the GaN-based startup transistor canhandle up to 800 volts whereas in some embodiments a JFET startuptransistor may be limited to 600 volts.

FIG. 7D illustrates a transparent plan view of an electronic package 785that may be similar to electronic packages 700, 760 and 775 illustratedin FIGS. 7A, 7B and 7C, respectively, however as compared to package 760of FIG. 7B, in this embodiment controller 765 includes an integratedstartup transistor that performs a similar function as startuptransistor 770 illustrated in FIG. 7B. More specifically, in thisembodiment controller 765 may include a startup transistor that iscoupled to I/O terminal 733 a configured to receive a rectified highvoltage signal. The rectified high voltage signal can be used to supplystartup voltage and current to controller 765 until the circuit achievesnormal operation and power for the controller can be supplied by anothersource, such as an auxiliary winding of a transformer.

FIG. 7E illustrates a transparent plan view of an electronic package 787that may be similar to electronic packages 700, 760, 775 and 785illustrated in FIGS. 7A, 7B, 7C and 7D, respectively, however ascompared to package 785 of FIG. 7D, in this embodiment there is nodriver/control device 710, and source 720 is coupled to external I/Oterminals 745 r-745 u, not to die attach pad 715 as shown in previousembodiments. That is, in some embodiments GaN-based power transistor 780may not be equipped with a current sense circuit, thus I/O terminals 745r-745 u can be coupled to external current sense resistors that indicatecurrent flowing through the GaN-based power transistor. Controller 765may have one or more interconnects with GaN-based power transistor 780including at least a drive signal to control operation of the GaN-basedpower transistor.

FIG. 7F illustrates a transparent plan view of an electronic package 790that may be similar to electronic packages 700, 760, 775, 785 and 787illustrated in FIGS. 7A, 7B, 7C, 7D and 7E, respectively, however ascompared to package 785 of FIG. 7D, in this embodiment there is nodriver/control device 710. Any or all of the features of driver/controldevice 710 described above can be integrated within controller 765. Inthis particular embodiment GaN-based power transistor 780 includes acurrent sense circuit so source 720 is coupled to die attach pad 715.

FIG. 8 illustrates a transparent plan view of an electronic package 800,according to embodiments of the disclosure. As shown in FIG. 8 ,electronic package 800 can be fabricated using a quad-flat no lead (QFN)manufacturing process and can be similar to package 700 shown in FIG. 7, however in package 800 a GaN-based power transistor 805 is attached todie attach pad 835 and a silicon-based driver/control device 815 isattached to a top surface of the GaN-based power transistor. In someembodiments silicon-based driver/control device 815 is attached toGaN-based power transistor 805 using a non-electrically conductiveadhesive and one or more wirebonds 820 can be used to electricallycouple signals between the devices and terminals 825. In otherembodiments silicon-based driver/control device 815 can be a flip-chipconfiguration that is flipped upside down and attached to GaN-basedpower transistor 805 using one or more electrically conductive solderballs, columns, pads, electrically conductive epoxy dots or other typeof die to die interconnect structures. In this particular embodiment,GaN-based power transistor 805 can include any or all of a GaN-basedpower transistor, a current sense circuit and one or more portions of adriver circuit for the power transistor. The silicon-baseddriver/control device 815 may contain a temperature detection andover-temperature protection circuit. In this embodiment, placement ofdevice 815 on the GaN-based transistor 805 can allow more directmeasurement of the die surface temperature and allow a more accurate andfaster responding temperature protection.

GaN-based power transistor 805 includes a source 830 coupled to a dieattach pad 835, a drain 840 coupled to one or more train terminals 845and a gate 850 connected to silicon-based driver/control device 815 viawirebonds 820. In this embodiment, because there is an internal currentsense circuit, source 830 of GaN-based power transistor 805 can beelectrically coupled to die attach pad 835 without negatively affectinga thermal resistance between package 800 and a circuit board to which itis attached, as described above. Silicon-based driver/control device 815can include one or more I/O connections 855 that are coupled toterminals 825 via wirebonds 820. In some embodiments one of the one ormore I/O connections 855 is a current sense output, as described above.In some embodiments the current sense circuit can be similar to currentsense circuit 600 described in FIG. 6 , however in other embodiments adifferent type of current sense circuit can be used. In one embodimentat least a portion of the current sense circuit can be integrated insilicon-based driver/control device 815 such that the silicon-baseddevice transmits a ratioed current sense signal at an I/O terminal 825of package 800.

In some embodiments driver/control device 815 can have similar featuresand operation as driver/control device 710 illustrated and described inFIGS. 7A-7D. In further embodiments electronic package 800 can include aseparate controller (such as controller 765 illustrated in FIGS. 7B-7D)and/or a startup transistor (such as startup transistor 770 illustratedin FIG. 7B). In yet further embodiments GaN-based power transistor 805can include a GaN-based startup transistor (similar to that described inFIG. 7C) and/or a pull-down device. Any of the devices and/or featuresdescribed in FIGS. 7A-7D can be employed in electronic package 800.

FIG. 9 illustrates a transparent plan view of an electronic package 900,according to embodiments of the disclosure. As shown in FIG. 9 ,electronic package 900 can be fabricated using a quad-flat no lead (QFN)manufacturing process and can be similar to package 200 illustrated inFIGS. 2-3 , however in this embodiment package 900 includes anintegrated GaN-based power transistor 905 and a Zener diode 910 attachedto die attach pad 915. In some embodiments a breakdown voltage of Zenerdiode 910 can be used as a reference by an internal voltage regulatorcircuit on integrated GaN power transistor 905 that replicates itsvoltage on a gate of the power transistor.

By placing Zener diode 910 within package 900 the Zener diode can beisolated from EMI noise outside of the package which can cause thevoltage regulator to go out of regulation, or cause other circuitissues. In some embodiments Zener diode 910 can be a relatively highimpedance device to minimize the amount of current drawn through it tomaintain the breakdown voltage as a voltage reference.

In some embodiments Zener diode 910 can be attached on a separate padwithin package 900 and in one embodiment it can be attached to a topsurface of integrated GaN-based power transistor 905. Electricalinterconnects can be formed with wirebonds 920, flip-chip interconnectsor any other suitable method. Any of the devices and/or featuresdescribed in FIGS. 7A-7D can be employed in electronic package 900.

FIG. 10A illustrates a transparent plan view of an electronic package1000, according to embodiments of the disclosure. As shown in FIG. 10A,electronic package 1000 can be fabricated using a quad-flat no lead(QFN) manufacturing process and can be similar to package 700 in FIG. 7which included silicon-based die co-packaged with GaN-based transistor,however in electronic package 1000 a high side GaN-based transistor 1005is attached to a high side die attach pad 1025 adjacent a silicon-basedhigh side driver/control die 1030. Similarly, a low side GaN-basedtransistor die 1015 is attached to a low side die attach pad 1035adjacent a silicon-based low side driver/control die 1020. Thus in thisembodiment four separate dies are integrated into a single electronicpackage 1000. In another embodiment that can be similar to theconfiguration shown in FIG. 8 , silicon-based high side driver/controldie 1030 can be stacked on high side GaN-based transistor die 1005and/or silicon-based low side driver/control die 1020 can be stacked onlow side GaN-based transistor die 1015. In some embodiments die stackingcan enable larger GaN-based dies for the same package size resulting inhigher power handling capability and/or improved efficiency.

High side GaN-based transistor die 1005 is attached to high side dieattach pad 1025 and includes a high side transistor (not shown in FIG.10A) including a drain 1040 that is coupled to one or more input powerterminals 1045. The high side transistor also includes a source 1050that is coupled to a drain 1055 of a low side transistor (not shown inFIG. 10A) via high side die attach pad 1025 though wirebonds 1065. Highside GaN-based transistor die 1005 can also include a receiver circuit(not shown) that is configured to receive a level-shifted signal and inresponse control a gate drive circuit that controls a gate of the lowside transistor. A receiver circuit contact 1070 is electrically coupledto level shift output contact 1063 to carry the level-shifted signal.

In some embodiments low side GaN-based transistor die 1005 includes alevel shifter circuit (not shown in FIG. 10A) that transmits thelevel-shifted signal via level shift output contact 1063. The levelshifter circuit can be driven in response to one or more inputs to lowside driver/control die 1020, such as a PWM input from a separatecontrol die. Low side GaN-based transistor die 1015 further includes alow side transistor having a source 1075 that is coupled low side dieattach pad 1035, and a gate 1080 that is coupled to low sidedriver/control die 1020. Drain 1055 is coupled to source 1050 throughhigh side die attach pad 1025 and/or directly to source 1050. Low sideand high side driver/control dies 1020, 1030, respectively, can haveother I/O, such as a ratioed current sense output signal, that arecoupled to terminals 1045. Other embodiments can have differentconfigurations and die connections as described herein and as would beappreciated by one of skill in the art having the benefit of thisdisclosure.

FIG. 10B illustrates a simplified functional block diagram of electronicpackage 1000 shown in FIG. 10A. As shown in FIG. 10B, electronic packagecan include four separate die including a high side GaN-based die 1005,a low side GaN-based die 1015, a high side silicon-based die 1030 and alow side silicon-based die 1020. Each die can have various features,some of which are illustrated in FIG. 10B and described herein, howeverthis description in no way limits the features each die can have. Asshown in FIG. 10B, high side GaN-based die 1005 can include a high sidepower transistor 1002 that is electrically coupled to low side powertransistor 1004 defining a switch node 1006 therebetween.

In some embodiments electronic package 1000 is suited for use inhalf-bridge applications. High side power transistor 1002 can be coupledto input voltage 1008 and low side power transistor 1004 can be coupledto ground 1012. In some embodiments low side GaN-based die 1015 caninclude a low side driver circuit 1014 that can drive a gate of low sidepower transistor 1004. However, in other embodiments low sidesilicon-based die 1020 can include a low side silicon-based drivercircuit 1016 for driving the gate of low side power transistor 1004. Insome embodiments low side GaN-based die 1015 can include a gate voltageregulator circuit 1018 for supplying power to driver circuit 1014.However, in other embodiments low side silicon-based die 1020 caninclude gate voltage regulator circuit 1022 for regulating voltagesupplied to silicon-based driver circuit 1016 or to driver circuit 1014.

In some embodiments low side GaN-based die 1015 can include at least aportion of a bootstrap circuit 1024 that can be used to generatehigh-side bias to drive the gate of high-side power transistor 1002. Thebasic components of bootstrap circuit 1024 include a capacitor, a diode,a resistor and often a bypass capacitor. In some embodiments the diodecan be formed on the low side GaN-based die 1015, however in otherembodiments additional components can also be formed on the low sideGaN-based die. In some embodiments, low side silicon-based die 1020 caninclude at least a portion of a bootstrap driver circuit 1032 asdescribed above.

In some embodiments low side GaN-based die 1015 can include an undervoltage lockout circuit 1034 that can disable one or more features ofelectronic package 1000 in response to detecting an input voltage thatis below a threshold voltage. In one embodiment the input voltage is aVDD input voltage and under voltage lockout circuit 1034 responds byforcing low side power transistor 1004 in an off state and/or forcinghigh side power transistor 1002 in an off state. In some embodiments lowside silicon-based die 1020 can have an under voltage lockout circuit1038 that can also disable one or more features of electronic package1000 in response to detecting an input voltage that is below a thresholdvoltage, as described in more detail above. In some embodiments low sideGaN-based die 1015 can include a level shifter circuit 1036 thattransmits a signal causing a gate of high side power transistor 1002 toturn on and/or turn off.

In some embodiments low side silicon-based die 1020 can include avoltage reference circuit 1042 that can be used by under voltage lockoutcircuit 1038 or any other circuit to provide one or more referencevoltages that can be used for comparator and/or logic operations of lowside silicon-based die 1020 and/or low side GaN-based die 1015. In someembodiments, low side silicon-based die 1020 can include a current senseamplifier circuit 1044 that can receive a sensed current signal relatedto a current flowing through low side power transistor 1004 and amplifythe signal so it can be transmitted to a receiver circuit. In someembodiments low side silicon-based die 1020 can include a temperaturesensing circuit 1046 that can sense a temperature of low side powertransistor 1004 and/or low side silicon-based die 1020 and generate asignal corresponding to the sensed temperature.

In some embodiments temperature sensing circuit 1046 can also controloperation of low side power transistor 1004 and/or high side powertransistor 1002 to cease operation if the sensed temperature exceeds athreshold temperature. In some embodiments low side silicon-based die1020 can include a control circuit 1048 that can include any suitableconfiguration of logic and/or control circuits that can be used by anycircuits within low side silicon-based die 1020 or electronic package1000.

In some embodiments high side GaN-based die 1005 can include a drivercircuit 1052 that can drive a gate of high side power transistor 1002.However, in other embodiments high side silicon-based die 1030 caninclude a high side silicon-based driver circuit 1054 for driving thegate of high side power transistor 1002. In some embodiments high sideGaN-based die 1005 can include a gate voltage regulator circuit 1056 forsupplying power to driver circuit 1052. However, in other embodimentshigh side silicon-based die 1030 can include gate voltage regulatorcircuit 1058 for regulating voltage supplied to silicon-based drivercircuit 1054 or to driver circuit 1052. In some embodiments, high sideGaN-based die 1005 can include a receiver circuit 1062 configured toreceive a level shift signal from level shifter circuit 1036 to operatea gate of high side power transistor 1002. In other embodiments, highside silicon-based die 1030 can include receiver circuit 1064 configuredto receive a level shift signal from level shifter circuit 1036 tooperate a gate of high side power transistor 1002.

In some embodiments high side silicon-based die 1030 can include anunder voltage lockout circuit 1066 that can disable one or more featuresof electronic package 1000 in response to detecting an input voltagethat is below a threshold voltage. In one embodiment the input voltageis a VDD input voltage and under voltage lockout circuit 1066 respondsby forcing low side power transistor 1004 into an off state and/orforcing high side power transistor 1002 into an off state.

In some embodiments high side silicon-based die 1030 can include avoltage reference circuit 1068 that can be used by under voltage lockoutcircuit 1066 or any other circuit to provide one or more referencevoltages that can be used for comparator and/or logic operations of highside silicon-based die 1030 and/or high side GaN-based die 1005. In someembodiments, high side silicon-based die 1030 can include a currentsense amplifier circuit 1072 that can receive a sensed current signalrelated to a current flowing through high side power transistor 1002 andamplify the signal so it can be transmitted to a receiver circuit. Insome embodiments high side silicon-based die 1030 can include atemperature sensing circuit 1074 that can sense a temperature of highside power transistor 1005 and/or high side silicon-based die 1030 andgenerate a signal corresponding to the sensed temperature.

In some embodiments temperature sensing circuit 1074 can also controloperation of high side power transistor 1005 and/or low side powertransistor 1015 to cease operation if the sensed temperature exceeds athreshold temperature. In some embodiments high side silicon-based die1030 can include a control circuit 1076 that can include any suitableconfiguration of logic and/or control circuits that can be used by anycircuits within high side silicon-based die 1030 or electronic package1000.

In some embodiments high side GaN-based transistor die 1005 and/or lowside GaN-based transistor die 1015 can include a power field-effecttransistor (FET) and a pull-down transistor that is coupled to therespective power transistor 1002, 1004 for each die. In furtherembodiments other circuits can be included in electronic package 1000 aswould be appreciated by one of skill in the art having the benefit ofthis disclosure, including but not limited to a high voltagediode-connected FET for short circuit detection, dv/dt detectorcircuits, and an external Zener diode reference circuit.

Any of the circuits and/or functions described with regard to FIGS. 10Aand 10B can be communicatively coupled together, combined or partitioneddifferently than shown in FIGS. 10B and 10B. For example, in oneembodiment one or more functions of high side silicon-based die 1030 andone or more functions of low side silicon-based die 1020 can be combinedinto a single silicon-based die so electronic package 1000 has twoGaN-based die and one silicon-based die.

In some embodiments that include both low side GaN-based transistor 1015and low side silicon-based driver/control die 1020 attached to a commonlow side die attach pad 1035, the low side silicon-based driver/controldie can accurately detect a temperature of the low side GaN-basedtransistor, can have improved noise immunity from switching noise, cangenerate accurate power supply rails, can accurately detect undervoltage lockout triggers, can accurately detect current flow and canhave improved shoot-through protection. Further, with regard to drivercircuitry, the gate drive signal can be transmitted to low sideGaN-based transistor 1015 with increased speed and accuracy due to theshort interconnect distance between the dies resulting in reducedparasitic capacitance and inductance. Similar benefits can be realizedby attaching high side GaN-based transistor 1005 and silicon-based highside driver/control die 1030 to a common high side die attach pad 1025.

In another embodiment of an electronic package that includes onesilicon-based device and one GaN-based device wherein the silicon baseddevice can include a voltage reference circuit, a Vdd regulator circuit,a current sense amplifier circuit, a gate drive logic circuit, a shortcircuit protection logic circuit, an over-temperature protectioncircuit, an under-voltage lockout circuit, a gate drive minus pulldowncircuit and/or a pulldown driver circuit. The GaN-based device caninclude a power transistor circuit, a pulldown FET circuit, high voltagediode-connected FET for short circuit detection and/or a dv/dt detectcircuit for adaptive deadtime.

In some embodiments high side silicon-based die 1030 has circuitry on itthat is referenced to the high side source. In one embodiment the highside silicon-based die is a high voltage IC with a floating well toinclude high side circuitry. In other embodiments, both the low sidesilicon-based die and the high side silicon-based die are low voltagedevices, and the high voltage functions such as level shift, bootstrap,de-sat, and startup circuits are in the high and/or low side GaN basedtransistors 1030, 1020, respectively.

In some embodiments an electronic package includes a GaN-based devicewith a specific pinout to enable paralleling on a single layer insulatedmetal substrate. In one embodiment the gate of the GaN-based device iscoupled to a terminal of the package so that gates of two separateelectronic packages can be tied together by a resistor. Thisconfiguration may assist compensating for any timing mismatch in thedrivers of the two GaN-based devices, as the PWM inputs may also be tiedtogether. In some embodiments an external current sense resistor iscoupled between an I/O terminal and the die attach pad.

In some embodiments driver/control devices 1020, 1030 can have similarfeatures and operation as driver/control device 710 illustrated anddescribed in FIGS. 7A-7D. In further embodiments electronic package 1000can include a separate controller (such as controller 765 illustrated inFIGS. 7B-7D) and/or a startup transistor (such as startup transistor 770illustrated in FIG. 7B). In yet further embodiments GaN-based powertransistor 1005,1015 can include a GaN-based startup transistor (similarto that described in FIG. 7C) and/or a pull-down device. Any of thedevices and/or features described in FIGS. 7A-7D can be employed inelectronic package 1000.

In some embodiments package types other than QFN can be used inaccordance with the embodiments described herein. In various embodimentsa multi-chip module (MCM) that includes a multilayer substrate made froma circuit board or other material can be used. In further embodiments asealed chip on board (SCOB) device, quad flat pack (QFP), small outlineIC (SOIC) package, D2-PAK (e.g., TO-263), over-molded package or anyother suitable electronic package can be used.

The components, circuit layout, circuit functionality, type ofinterconnect, physical arrangement of semiconductor devices, etc. shownherein are for example only and variants are within the scope of thisdisclosure.

In one embodiment creepage spacing, such as creepage spacing 255 in FIG.2B can be varied depending on the voltage and reliability needs of theapplication. In one embodiment creepage spacing is between 0.6millimeters and 2 millimeters, while in another embodiment it is between0.8 millimeters and 1.2 millimeters, and in one embodiment it is are atleast 1.0 millimeters. In another embodiment creepage spacing 255 isbetween 0.8 millimeters and 3 millimeters, while in another embodimentit is between 1.8 millimeters and 2.8 millimeters, and in one embodimentit is at least 1.5 millimeters. In a further embodiment creepage spacing255 is between 0.8 millimeters and 3 millimeters, while in anotherembodiment it is between 1.8 millimeters and 2.8 millimeters, and in oneembodiment it is at least 2.0 millimeters.

In some embodiments, low side transistor 110 (see FIGS. 1-10 ) and/orhigh side transistor 115 may be GaN-based enhancement-mode field effecttransistors (FET). In other embodiments low side transistor 110 and highside transistor 115 may be any other types of devices including, but notlimited to, GaN-based depletion-mode transistors, GaN-baseddepletion-mode transistors connected in series with silicon basedenhancement-mode field-effect transistors having the gate of thedepletion-mode transistor connected to the source of the silicon-basedenhancement-mode transistor, silicon carbide based transistors orsilicon-based transistors.

In some embodiments low side transistor 110 and high side transistor 115may be made from a GaN-based material. In one embodiment the GaN-basedmaterial may include a layer of GaN on a layer of silicon. In furtherembodiments the GaN based material may include, but not limited to, alayer of GaN on a layer of silicon carbide, sapphire or aluminumnitride. In one embodiment the GaN based layer may include, but notlimited to, a composite stack of other III nitrides such as aluminumnitride and indium nitride and III nitride alloys such as AlGaN andInGaN.

As discussed above, in some embodiments package base 205 (see FIG. 2A)may comprise a leadframe that may include copper while in otherembodiments other types of metals may be used, including metal alloys.In further embodiments the leadframe may be a part of a larger leadframethat may be subsequently singulated into multiple electronic packages200, as discussed in more detail below. In one embodiment the leadframemay be between 50 microns and 250 microns thick. In further embodimentspackage base 205 may be between 100 and 200 microns thick while inanother embodiment it may be approximately 150 microns thick. In otherembodiments package base 205 (see FIG. 2A) may be a printed circuitboard as known by those of skill in the art and may have one or morelayers of circuit routing.

In some embodiments encapsulant 250 (see FIG. 3 ) may be a dielectricpolymer-based material and may have one or more solid fillers such as,but not limited to silica, aluminum-oxide or aluminum nitride. Infurther embodiments the polymer may be a thermosetting epoxy, polyimideor polyurethane. In other embodiments the polymer may be a thermoplasticmaterial such as, but not limited to polyphenylene sulfide or liquidcrystal polymer.

In some embodiments electronic packages described herein may beconfigured for use in high voltage applications where a leakage pathalong the surface of the encapsulant may be configured to meetreliability and performance requirements. In some embodiments, asubstrate can be used as a package base and may be made of a highdielectric material such as, but not limited to a ceramic or an organicmaterial. In one embodiment the substrate may be made from aluminumoxide and have metallization on a top and a bottom surface. A highdielectric material such as aluminum oxide may be used to achieve therequired dielectric withstanding voltage between the switch node andground while keeping the substrate relatively thin.

In further embodiments the substrate may be made of a relatively highthermal conductivity material such as, but not limited to aluminumnitride, or silicon nitride and may provide an efficient thermal pathfrom one or more transistors to a circuit board to which the package isattached.

In some embodiments electronic packages as described herein may haveexternal dimensions of 5 millimeters by 6 millimeters while in otherembodiments they may have external dimensions of 6 millimeters by 8millimeters and a 0.65 millimeter terminal pitch. In another embodimentelectronic package may have external dimensions of 8 millimeters by 8millimeters, while other embodiments can have other suitable externaldimensions.

In some embodiments devices described herein as GaN based may include afirst layer that can include silicon, silicon carbide, sapphire,aluminum nitride or other material. A second layer is disposed on thefirst layer and can include gallium nitride or other material. A thirdlayer can be disposed on the second layer and can include a compositestack of other III nitrides such as, but not limited to, aluminumnitride, indium nitride and III nitride alloys such as aluminum galliumnitride and indium gallium nitride. In one embodiment the third layer isAl_(0.20) Ga_(0.80) N. In further embodiments any other suitablecompound semiconductor material can be used.

Example QFN Manufacturing Process

Now referring to FIG. 11 an example QFN manufacturing process 1100 isillustrated. Manufacturing process 1100 is for example only and otherelectronic package manufacturing processes may be used without departingfrom the invention.

In one embodiment the QFN manufacturing process may include a substratethat may comprise electrically conductive portions is used to form apackage base on which one or more semiconductor dies are mounted andelectrically coupled to. Portions of the substrate may form one or moreexternal electrical connections and a dielectric encapsulant may beformed on at least a top surface of the substrate and around the one ormore semiconductor dies, as discussed in more detail below.

Now referring to step 1105 of FIG. 11 a package base having appropriatecreepage and clearance is provided. In some embodiments package base maybe a metallic leadframe. In some embodiments the leadframe may comprisecopper while in other embodiments other types of metals may be used,including alloys. In other embodiments the package base may be a printedcircuit board having one or more layers of electrical routing. Infurther embodiments the leadframe or printed circuit board may be a partof a larger panel that may be subsequently singulated into multiplesingular electronic packages. In one embodiment the package base may bebetween 50 microns and 1 millimeter thick. In further embodiments thepackage base may be between 100 microns 750 microns thick while inanother embodiment it may be between 150 microns and 500 microns thick.

In some embodiments the package base is equipped with the appropriatecreepage and clearance distances between pads of different voltagepotentials as required by the application. In some embodiments thecreepage and clearance distances may be between 0.5 millimeter and 4millimeters while in further embodiments they may be between 1millimeters and 3 millimeters and in further embodiments may be between2 and 3 millimeters.

Now referring to step 1110 of FIG. 11 one or more semiconductor devicesare provided. As discussed above, in some embodiments the one or moresemiconductor devices may be GaN-based devices and/or silicon-baseddevices. In further embodiments the one or more GaN-based devices mayhave a plurality of source pads separated by a plurality of drain padsby 1 millimeter or less.

Now referring to step 1115 of FIG. 11 the one or more semiconductordevices are mounted to top surface the package base. In some embodimentsthe one or more semiconductor devices may have a metalized back surfacethat is soldered to the package base while in other embodiments they maybe glued with an adhesive that may or may not be electricallyconductive. In some embodiments one or more dies can be stacked on thedies attached to the package base. The stacked dies can be attached“face up” or “face down” which may also be called a “flip chip”. In someembodiments an interposer substrate can be attached to the die attachpad first, followed by one or more dies attached to the interposersubstrate. In one embodiment the interposer substrate is an insulatedmetal substrate (IMS) that can include one or more metallized surfacesof a ceramic layer.

Now referring to step 1120 of FIG. 11 electrical connections may beadded to electrically couple the one or more semiconductor devices tothe package base and/or to each other. In one embodiment wirebonds maybe used that comprise gold, silver, copper or aluminum. In anotherembodiment other interconnect methods may be used such as metallic clipsand other electrically conductive substances. In further embodimentswith flip chip dies solder balls, columns, conductive epoxy or otherinterconnects can be used.

Now referring to step 1125 in FIG. 11 the one or more semiconductordevices and at least a top surface of the package base are encapsulatedwith an encapsulant material. The encapsulant material has a thicknessthat extends from top surface of the package base to a top surface ofthe semiconductor package such that the active areas of thesemiconductor device and the electrical interconnects may be protectedfrom the environment. In some embodiments the encapsulant material mayextend into recesses or indentation features in the package basecreating a substantially solid electronic package with few or no airvoids. In some embodiments more than one semiconductor package that maybe known as a “panel” may be encapsulated at the same time.

In some embodiments the encapsulant material may be a dielectricpolymer-based material and may have one or more solid fillers such as,but not limited to silica, aluminum-oxide or aluminum nitride. Infurther embodiments the polymer may be a thermosetting epoxy, polyimideor polyurethane. In other embodiments the polymer may be a thermoplasticmaterial such as, but not limited to polyphenylene sulfide or liquidcrystal polymer. In some embodiments encapsulant material may bedisposed on the package base with a transfer molding process.

Now referring to step 1130 in FIG. 11 if more than one electronicpackage is fabricated in a panel format the packages are singulated. Insome embodiments they may be sawn apart while in other embodiments theymay be punch singulated and in further embodiments they may be lasercut.

For simplicity, various internal components, internal circuitry, andperipheral circuitry of electronic circuit 100 and package 200 (seeFIGS. 1-3 ) are not shown in the figures.

In the foregoing specification, embodiments of the disclosure have beendescribed with reference to numerous specific details that can vary fromimplementation to implementation. The specification and drawings are,accordingly, to be regarded in an illustrative rather than a restrictivesense. The sole and exclusive indicator of the scope of the disclosure,and what is intended by the applicants to be the scope of thedisclosure, is the literal and equivalent scope of the set of claimsthat issue from this application, in the specific form in which suchclaims issue, including any subsequent correction. The specific detailsof particular embodiments can be combined in any suitable manner withoutdeparting from the spirit and scope of embodiments of the disclosure.

Additionally, spatially relative terms, such as “bottom or “top” and thelike can be used to describe an element and/or feature's relationship toanother element(s) and/or feature(s) as, for example, illustrated in thefigures. It will be understood that the spatially relative terms areintended to encompass different orientations of the device in use and/oroperation in addition to the orientation depicted in the figures. Forexample, if the device in the figures is turned over, elements describedas a “bottom” surface can then be oriented “above” other elements orfeatures. The device can be otherwise oriented (e.g., rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein interpreted accordingly.

Terms “and,” “or,” and “an/or,” as used herein, may include a variety ofmeanings that also is expected to depend at least in part upon thecontext in which such terms are used. Typically, “or” if used toassociate a list, such as A, B, or C, is intended to mean A, B, and C,here used in the inclusive sense, as well as A, B, or C, here used inthe exclusive sense. In addition, the term “one or more” as used hereinmay be used to describe any feature, structure, or characteristic in thesingular or may be used to describe some combination of features,structures, or characteristics. However, it should be noted that this ismerely an illustrative example and claimed subject matter is not limitedto this example. Furthermore, the term “at least one of” if used toassociate a list, such as A, B, or C, can be interpreted to mean anycombination of A, B, and/or C, such as A, B, C, AB, AC, BC, AA, AAB,ABC, AABBCCC, etc.

Reference throughout this specification to “one example,” “an example,”“certain examples,” or “exemplary implementation” means that aparticular feature, structure, or characteristic described in connectionwith the feature and/or example may be included in at least one featureand/or example of claimed subject matter. Thus, the appearances of thephrase “in one example,” “an example,” “in certain examples,” “incertain implementations,” or other like phrases in various placesthroughout this specification are not necessarily all referring to thesame feature, example, and/or limitation. Furthermore, the particularfeatures, structures, or characteristics may be combined in one or moreexamples and/or features.

What is claimed is:
 1. An electronic device comprising: an electricallyconductive package base including a high side die attach pad, a low sidedie attach pad and a plurality of I/O terminals; a low side galliumnitride (GaN) based die attached to the low side die attach pad, the lowside GaN-based die including a low side gate, a low side drain, a lowside source and a level shifter circuit; a silicon-based die including:an input for receiving a control signal; an output for transmitting agate control signal; a gate voltage regulator circuit that regulatespower of a driver circuit; and a control circuit arranged to deliver apulse width modulated (PWM) signal to the low side gate of the low sideGaN-based die; a high side GaN-based die attached to the high side dieattach pad, the high side GaN-based die including a high side sourcecoupled to the low side drain, a high side gate coupled to the levelshifter circuit, and a high side drain coupled to one or more of theplurality of I/O terminals; and an encapsulant at least partiallyencapsulating the package base, the low side GaN-based die, thesilicon-based die, and the high side GaN-based die.
 2. The electronicdevice of claim 1 wherein the output of the silicon-based die is coupledto the low side gate and transmits a low side gate control signal. 3.The electronic device of claim 1 wherein the silicon-based die includesa receiver circuit configured to receive, at the input, the controlsignal from the level shifter circuit and in response transmits the gatecontrol signal to a high side gate driver circuit, wherein the high sidegate driver circuit is coupled to the high side gate.
 4. The electronicdevice of claim 1 wherein the gate voltage regulator circuit iselectrically coupled to a low side gate driver circuit disposed on thelow side GaN-based die.
 5. The electronic device of claim 1 wherein thegate voltage regulator circuit is electrically coupled to a high sidegate driver circuit disposed on the high side GaN-based die.
 6. Theelectronic device of claim 1 wherein the silicon-based die includes acurrent sense amplifier circuit that receives and amplifies a sensedcurrent signal.
 7. The electronic device of claim 6 wherein the sensedcurrent signal is received from the low side GaN-based die and isproportional to a current flowing through the low side GaN-based die. 8.The electronic device of claim 6 wherein the sensed current signal isreceived from a current sensing device positioned outside of theelectronic device.
 9. The electronic device of claim 1 wherein the lowside GaN-based die includes an integrally formed diode connectedtransistor electrically coupled to the low side drain.
 10. Theelectronic device of claim 9 wherein the diode connected transistor iselectrically coupled to a comparator circuit disposed on thesilicon-based die, and wherein the comparator circuit transmits an offsignal to the low side gate in response to a voltage at the low sidedrain exceeding a threshold voltage.
 11. The electronic device of claim1 wherein the low side GaN-based die includes an integrally formeddepletion mode transistor that has a drain terminal coupled to a voltagesource and a source terminal coupled to the control circuit, and whereinthe depletion mode transistor is configured to provide start-up powerfor the control circuit.
 12. The electronic device of claim 1 whereinthe silicon-based die is a low side silicon-based die and the electronicdevice includes a high side silicon-based die.
 13. The electronic deviceof claim 12 wherein the high side GaN-based die includes an integrallyformed diode connected transistor electrically coupled to the high sidedrain.
 14. The electronic device of claim 13 wherein the diode connectedtransistor is electrically coupled to a comparator circuit disposed onthe high side silicon-based die, and wherein the comparator circuittransmits an off signal to the high side gate in response to a voltageat the high side source exceeding a threshold voltage.
 15. Theelectronic device of claim 12 wherein the low side silicon-based die andthe high side silicon-based die are low voltage devices and wherein highvoltage functions are performed in at least one of the low sideGaN-based die or the high side GaN-based die.
 16. The electronic deviceof claim 12 wherein the low side silicon-based die includes atemperature sensor that senses a temperature of the low side GaN-baseddie.
 17. The electronic device of claim 12 wherein the high sidesilicon-based die includes a receiver circuit configured to receive asignal from the level shifter circuit and in response operate a highside gate driver circuit.
 18. The electronic device of claim 12 whereinthe high side silicon-based die includes an under voltage lockoutcircuit that disables the high side gate in response to detecting aninput voltage below a threshold voltage.
 19. The electronic device ofclaim 12 wherein the high side silicon-based die is attached to a topsurface of the high side GaN-based die in a stacked configuration. 20.The electronic device of claim 1 wherein the silicon-based die includesan over temperature detection circuit that limits a temperature of atleast one of the low side GaN-based die or the high side GaN-based die.21. The electronic device of claim 1 wherein the high side GaN-based dieincludes a receiver circuit configured to receive a signal from thelevel shifter circuit and in response operate a high side gate drivercircuit.
 22. The electronic device of claim 1 wherein the silicon-baseddie is attached to a top surface of the low side GaN-based die in astacked configuration.
 23. The electronic device of claim 1 wherein thelow side GaN-based die includes at least a portion of a bootstrap drivercircuit.
 24. The electronic device of claim 1 wherein the low sideGaN-based die includes an under voltage lockout circuit that disablesthe level shifter circuit in response to detecting an input voltagebelow a threshold voltage.
 25. The electronic device of claim 1 whereinthe high side GaN-based die includes an under voltage lockout circuitthat disables the high side gate in response to detecting an inputvoltage below a threshold voltage.
 26. The electronic device of claim 1wherein the high side source is coupled to the low side drain throughthe high side die attach pad.
 27. The electronic device of claim 1configured to operate as a half-bridge power converter wherein the highside drain is coupled to an input voltage of an external power source,the low side source is coupled to a ground and the high side die attachpad forms a switch node of the half-bridge power converter.